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BCV62 from 西门子

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BCV62

Manufacturer: 西门子

PNP Silicon Double Transistor

Partnumber Manufacturer Quantity Availability
BCV62 西门子 4758 In Stock

Description and Introduction

PNP Silicon Double Transistor The BCV62 is a component manufactured by Siemens. However, specific technical specifications for the BCV62 are not provided in the available knowledge base. For detailed specifications, it is recommended to refer to Siemens' official documentation or datasheets.
Partnumber Manufacturer Quantity Availability
BCV62 NXP 12000 In Stock

Description and Introduction

PNP Silicon Double Transistor The BCV62 is a general-purpose NPN/PNP transistor pair manufactured by NXP Semiconductors. Here are the key specifications from Ic-phoenix technical data files:

1. **Type**: Dual NPN/PNP transistor (BCV62A: NPN + PNP, BCV62B: PNP + NPN, BCV62C: NPN + NPN).
2. **Package**: SOT143B (surface-mount).
3. **Voltage Ratings**:
   - Collector-Base Voltage (NPN): 30V (BCV62A/C).
   - Collector-Emitter Voltage (NPN): 30V (BCV62A/C).
   - Collector-Base Voltage (PNP): -30V (BCV62A/B).
   - Collector-Emitter Voltage (PNP): -30V (BCV62A/B).
4. **Current Ratings**:
   - Collector Current (DC): 100mA (per transistor).
5. **Power Dissipation**: 250mW (total for the package).
6. **Transition Frequency (fT)**: 250MHz (typical for both NPN and PNP).
7. **Current Gain (hFE)**:
   - NPN: 40–250 (at IC = 2mA, VCE = 5V).
   - PNP: 40–250 (at IC = -2mA, VCE = -5V).
8. **Noise Figure**: 1dB (typical at 1kHz, IC = 100µA).

These specifications are based on NXP's datasheet for the BCV62 series. For exact performance under specific conditions, refer to the official documentation.

Partnumber Manufacturer Quantity Availability
BCV62 PHILIPS 10400 In Stock

Description and Introduction

PNP Silicon Double Transistor The BCV62 is a dual general-purpose PNP transistor manufactured by PHILIPS (now NXP Semiconductors).  

**Key Specifications:**  
- **Transistor Type:** PNP  
- **Configuration:** Dual (two transistors in one package)  
- **Collector-Base Voltage (VCBO):** -30 V  
- **Collector-Emitter Voltage (VCEO):** -30 V  
- **Emitter-Base Voltage (VEBO):** -5 V  
- **Collector Current (IC):** -100 mA per transistor  
- **Total Power Dissipation (Ptot):** 200 mW  
- **DC Current Gain (hFE):** Typically 100 to 400  
- **Package:** SOT143B (surface-mount)  

**Applications:**  
- Signal amplification  
- Switching circuits  
- General-purpose PNP transistor applications  

The BCV62 is designed for low-power, high-gain applications in compact circuits.

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