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Partno	Mfg	Dc	Qty	Available	Descript
BCV61	NXP	N/a	12000	avai	NPN Silicon Double Transistor

BCV61 ,NPN Silicon Double TransistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCV61 ,NPN Silicon Double TransistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BCV61 ,NPN Silicon Double Transistorapplications where the working point must beindependent of temperature• Current mirrors.handbook, h ..
BCV61 ,NPN Silicon Double TransistorDISCRETE SEMICONDUCTORSDATA SHEETM3D071BCV61NPN general purpose doubletransistor1999 Apr 08Product ..
BCV61A ,NPN general purpose double transistor
BCV61B ,NPN general purpose double transistor
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BCV61
NPN general-purpose double transistors
Product profile1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features Low current (max. 100 mA) Low voltage (max.30V) Matched pairs
1.3 Applications Applications with working point independent of temperature Current mirrors Pinning information
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009 Product data sheet
Table 1. Product overview
BCV61 SOT143B - BCV62
BCV61A BCV62A
BCV61B BCV62B
BCV61C BCV62C
Table 2. Pinning collector TR2;
base TR1 and TR2 collector TR1
3emitter TR1
4emitter TR2 214
NXP Semiconductors BCV61
NPN general-purpose double transistors Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering information
BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C
Table 4. Marking codes
BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBS emitter-base voltage VCE =0V - 6 V collector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Per device
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors BCV61
NPN general-purpose double transistors Thermal characteristics
[1] Device mounted on an FR4 PCB. Characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air [1]- - 500 K/W
Table 7. Characteristics =25 °C unless otherwise specified.
Transistor TR1
ICBO collector-base cut-off current VCB =30V; =0A
--15 nA
VCB =30V; =0A; = 150°C
--5 μA
IEBO emitter-base cut-off current VEB =5V; =0A - 100 nA
hFE DC current gain VCE =5V; = 100μA
100 - -
VCE =5V; =2mA
110 - 800
VCEsat collector-emitter saturation
voltage =10mA; =0.5 mA 90 250 mV= 100 mA; =5mA 200 600 mV
VBEsat base-emitter saturation voltage IC =10mA; =0.5 mA
[1]- 700 - mV= 100 mA; =5mA
[1]- 900 - mV
VBE base-emitter voltage IC =2mA;
VCE =5V
[2] 580 660 700 mV =10mA;
VCE =5V
[2]- - 770 mV transition frequency VCE =5V; =10mA; = 100 MHz
100 - - MHz collector capacitance VCB =10V; =ie =0A; 1MHz
-2.5 -pF noise figure VCE =5V; = 200 μA; =2kΩ; 1kHz;
B=200Hz
--10 dB
NXP Semiconductors BCV61
NPN general-purpose double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
Transistor TR2
VEBS emitter-base voltage VCB =0V; = −250 mA −1.8 V
VCB =0V; = −10μA −400 --mV
hFE DC current gain VCE =5V; =2mA
BCV61 110 - 800
BCV61A 110 - 220
BCV61B 200 - 450
BCV61C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2= −0.5 mA;
VCE1 =5V
Tamb≤25°C 0.7 - 1.3
Tamb≤ 150°C 0.7 - 1.3
IE2 emitter current 2 VCE1 =5V [3] -- −5mA
Table 7. Characteristics …continued =25 °C unless otherwise specified.
NXP Semiconductors BCV61
NPN general-purpose double transistors
NXP Semiconductors BCV61
NPN general-purpose double transistors
NXP Semiconductors BCV61
NPN general-purpose double transistors

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