BCV61 ,NPN Silicon Double TransistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCV61 ,NPN Silicon Double TransistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BCV61 ,NPN Silicon Double Transistorapplications where the working point must beindependent of temperature• Current mirrors.handbook, h ..
BCV61 ,NPN Silicon Double TransistorDISCRETE SEMICONDUCTORSDATA SHEETM3D071BCV61NPN general purpose doubletransistor1999 Apr 08Product ..
BCV61A ,NPN general purpose double transistor
BCV61B ,NPN general purpose double transistor
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BCV61-BCV61B-BCV61C
NPN general purpose double transistor
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
FEATURES Low current (max. 100 mA) Low voltage (max. 30V) Matched pairs.
APPLICATIONS For use in applications where the working point must be
independent of temperature Current mirrors.
DESCRIPTIONNPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
MARKING
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Transistor mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
Notes Decreasing 1.7 mV/°C with increasing temperature. Decreasing 2 mV/°C with increasing temperature. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B