BCR555 ,Digital TransistorsBCR555PNP Silicon Digital Transistor 3
BCR555
Digital Transistors
BCR555
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit,
driver circuit Built in bias resistor (R1=2.2k, R2=10k
EHA071831B
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR555
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BCR555
DC Current Gain hFE = f (IC) CE = 5V (common emitter configuration) 3 10 10 10 10 10
Collector-Emitter Saturation Voltage CEsat = f (IC), hFE = 20
0.010 10 10 10
Input on Voltage Vi(on) = f (IC) CE = 0.3V (common emitter configuration)
10 2
-2 10
-1 10 10 10 10 10
Input off voltage Vi(off) = f (IC) CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR555
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
:
www.ic-phoenix.com
.
