BCR400W ,Active Bias Controller (AF SSIC)CharacteristicsAdditional current consumption - 20 40 µAI0V = 3 VSLowest stabilizing current - 0.1 ..
BCR402R ,Analog Silicon SSICsBCR402RLED Driver
BCR400W
Active Bias Controller (AF SSIC)
BCR 400W
Active Bias Controller
Characteristics• Supplies stable bias current even at low battery
• Low voltage drop of 0.7V
Application notes• Stabilizing bias current of NPN transistors and
• Ideal supplement for Sieget and other transistors
• also usable as current source up to 5mA
EHA071881NPN, BNPN, CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings
Thermal Resistance1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BCR 400W
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
DC Characteristics with stabilized NPN-Transistors
BCR 400W
Collector current IC = f (hFE) C and hFE refer to stabilized NPN Transistor
Parameter Rext. (Ω)
-1 10 10 10 10 10
Collector Current IC = f (VS)
of stabilized NPN Transistor
Parameter Rext. (Ω)
-1 10 10 10 10 10
Voltage drop Vdrop = f (IC)
10 3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
2.0
drop
Collector current IC = f (Rext.)
of stabilized NPN Transistor
10 4
-1 10 10 10 10 10
BCR 400W
Control current I = f (Rext.)
in current source application
10 -1 10 0 10 1 10 2
-1 10 10 10
IContr.
Collector current TA = f (IC)
of stabilized NPN Transistor
Parameter: Rext.(Ω)
-1 10 10 10 10 10
Control current I = f (VS)
in current source application
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
IContr.
Control current I = f (TA)
in current source application
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.5
IContr.
BCR 400W
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
50
100
150
200
250
300
400
tot
Note that up to TS=115°C
it is not possible to exceed Ptot
respecting the maximum
ratings of VS and IContr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controllerk100
100kΩ
RF INRF OUT
BCR 400W
RF transistor controlled by BCR 400EHA07217S
RF-Transistor
ext.Ι
dropV2C
RF IN
RF OUT
Be aware that BCR 400 stabilized
bias current of transistors in an active
control loop
In order to avoid loop ascillation
(hunting),
time constants must be chosen
adequately, i.e. C1 >= 10 x C2
RX/TX antenna switch, compatible to control logic
and working at wide battery voltage rangeλ/
Antenna
