BCR22PN ,Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50VBCR22PNNPN/PNP Silicon Digital Transistor Array 45
BCR22PN
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V
BCR22PN
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit,
driver circuit Two (galvanic) internal isolated NPN/PNP
Transistors in one package Built in bias resistor (R1=22k, R2=22k)
Tape loading orientationEHA07193356
Direction of Unreeling
Top ViewMarking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
EHA0717621E2B1E1R
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR22PN
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BCR22PN
NPN Type
DC Current Gain hFE = f (IC) CE = 5V (common emitter configuration) 2 10 10 10 10
Collector-Emitter Saturation Voltage CEsat = f (IC), hFE = 20
0.010 10 10
Input on Voltage Vi(on) = f (IC) CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
Input off voltage Vi(off) = f (IC) CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR22PN
PNP Type
Collector-Emitter Saturation Voltage CEsat = f (IC), hFE = 20
0.010 10 10
DC Current Gain hFE = f (IC) CE = 5V (common emitter configuration) 2 10 10 10 10
Input off voltage Vi(off) = f (IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
Input on Voltage Vi(on) = f (IC) CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
BCR22PN
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
