BCR191T ,Single digital (complex) AF-Transistors in SC75 packageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR191W ,PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR192 ,Digital TransistorsBCR192...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR192T ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR192W ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR198 ,PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BLM03BB220SN1D , SMD/BLOCK Type EMI Suppression Filters
BLM03BB220SN1D , SMD/BLOCK Type EMI Suppression Filters
BLM03BB470SN1D , SMD/BLOCK Type EMI Suppression Filters
BLM03BB470SN1D , SMD/BLOCK Type EMI Suppression Filters
BLM11A102S , SURFACE MOUNT EMI FILTERS CHIP FERRITE BEADS
BLM15AG100SN1D , Chip EMIFIL Inductor Type BLM15A_SN Series (0402 Size)
BCR191F-BCR191T
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR191.../SEMB1
PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ )
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR191/F/L3
BCR191T/W
BCR191S
SEMB1EHA07183B
EHA07173B2E2B1E1
BCR191.../SEMB1
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR191.../SEMB1
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR191.../SEMB1
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR191.../SEMB1
Total power dissipation Ptot = ƒ(TS)
BCR191
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR191F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR191L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR191S
50
100
150
200
300
tot
BCR191.../SEMB1
Total power dissipation Ptot = ƒ(TS)
BCR191T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR191W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMB1
50
100
150
200
300
tot
