BCR183L3 E6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR183L3E6327 ,Digital TransistorsBCR183...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR183S ,Digital TransistorsCharacteristics at T =25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.DC
BCR183S ,Digital TransistorsBCR183SPNP Silicon Digital Transistor Array 45
BCR183-BCR183L3 E6327-BCR183L3E6327-BCR183T-BCR183W
Digital Transistors
BCR183...
PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR183/F/L3
BCR183T/W
BCR183S
BCR183UEHA07183B
EHA07173B2E2B1E1
BCR183...
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR183...
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR183...
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat= ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR183...
Total power dissipation Ptot = ƒ(TS)
BCR183
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR183F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR183L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR183S
50
100
150
200
300
tot
BCR183...
Total power dissipation Ptot = ƒ(TS)
BCR183T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR183U
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR183W
50
100
150
200
300
tot
Permissible Pulse Load RthJS = ƒ(tp)
BCR183
10 0
-1 10 10 10 10 10
thJS
