BCR169U ,Digital TransistorsBCR169UPNP Silicon Digital TransistorPreliminary data4
BCR169U
Digital Transistors
BCR169U
PNP Silicon Digital Transistor
Preliminary data Switching circuit, inverter, interface circuit,
driver circuit Two ( galvanic) internal isolated Transistors
with good matching in one package Built in bias resistor (R1 = 4.7k)
EHA0717421E2B1E1R
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR169U
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BCR169U
Collector-Emitter Saturation Voltage CEsat = f (IC), hFE = 20
-1 10 10 10 10
DC Current Gain hFE = f (IC) CE = 5V (common emitter configuration)
10 2 10 10 10 10
Input on Voltage Vi(on) = f (IC) CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = f (IC) CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10 10
BCR169U
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
:
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