BCR169 ,Digital TransistorsBCR169...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR169F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR169...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR169S ,PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
BCR169U ,Digital TransistorsBCR169UPNP Silicon Digital TransistorPreliminary data4
BCR169-BCR169W
Digital Transistors
BCR169...
PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7k Ω)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR169/F/L3
BCR169T/W
BCR169S
BCR169UEHA07180
EHA07266B1E1
TR2
BCR169...
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR169...
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR169...
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 20
-1 10 10 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10 10
BCR169...
Total power dissipation Ptot = ƒ(TS)
BCR169
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR169F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR169L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR169S
50
100
150
200
300
tot
BCR169...
Total power dissipation Ptot = ƒ(TS)
BCR169T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR169U
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR169W
50
100
150
200
300
tot
Permissible Pulse Load RthJS = ƒ(tp)
BCR169
10 0
-1 10 10 10 10 10
thJS
