BCR141F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR141.../SEMH1NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, dr ..
BCR141FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR141S ,NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit)BCR141...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR141T ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR141W ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)BCR141...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR142 ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BLF7G22LS-200 ,Power LDMOS transistorapplications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G22LS-200 ,Power LDMOS transistorapplications in the 2110 MHz to 2170 MHz frequency rangeBLF7G22L-200; BLF7G22LS-200NXP Semiconducto ..
BLF7G24LS-140 ,Power LDMOS transistorapplications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-100 ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-140 ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-75P ,Power LDMOS transistorapplications in the 2300 MHz to 2700 MHz frequency rangeBLF7G27L-75P; BLF7G27LS-75PNXP Semiconducto ..
BCR141F
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR141.../SEMH1
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141/F/L3
BCR141T/W
BCR141S/U
SEMH1EHA07184B
EHA07174B2E2B1E1
BCR141.../SEMH1
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR141.../SEMH1
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR141.../SEMH1
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter voltage)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter voltage)
-3 10
-2 10
-1 10 10 10
BCR141.../SEMH1
Total power dissipation Ptot = ƒ(TS)
BCR141
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR141F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR141L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR141S
50
100
150
200
300
tot
BCR141.../SEMH1
Total power dissipation Ptot = ƒ(TS)
BCR141T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR141U
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR141W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMH1
50
100
150
200
300
tot
