BCR139F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR139...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR141 ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR141 E6327 , NPN Silicon Digital Transistor
BCR141E6327 , NPN Silicon Digital Transistor
BCR141F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR141.../SEMH1NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, dr ..
BCR141FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BLF7G10L-250 ,Power LDMOS transistorapplications in the 869 MHz to 960 MHz frequency rangeBLF7G10L-250; BLF7G10LS-250NXP Semiconductors ..
BLF7G20LS-140P ,Power LDMOS transistorapplications in the 1800 MHz to 2000 MHz frequency rangeBLF7G20LS-140PNXP SemiconductorsPower LDMOS ..
BLF7G20LS-200 ,Power LDMOS transistorapplications in the 1805 MHz to 1990 MHz frequency rangeBLF7G20L-200; BLF7G20LS-200NXP Semiconducto ..
BLF7G20LS-250P ,Power LDMOS transistorapplications in the 1805 MHz to 1880 MHz frequency rangeBLF7G20L-250P; BLF7G20LS-250PNXP Semiconduc ..
BLF7G20LS-250P ,Power LDMOS transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BLF7G22LS-130 ,Power LDMOS transistorapplications in the 2000 MHz to 2200 MHz frequency rangeBLF7G22L-130; BLF7G22LS-130NXP Semiconducto ..
BCR139F
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR139...
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ)
BCR139/F/L3
BCR139TEHA07264
BCR139...
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR139...
DC CharacteristicsPulse test: t < 300µs; D < 2%
AC Characteristics
BCR139...
DC current gain hFE = ƒ(IC)CE = 5V (common emitter configuration)
10 -1 10 10 10
Collector-emitter saturation voltageCEsat= ƒ(IC), hFE = 20
-4 10
-3 10
-2 10
-1 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-4 10
-3 10
-2 10
-1 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-6 10
-5 10
-4 10
-3 10
-2 10
BCR139...
Total power dissipation Ptot = ƒ(TS)
BCR139
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR139F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR139L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR139T
50
100
150
200
300
tot
BCR139...
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
BCR1390 10 10 10 10
totmax
totDC
Permissible Pulse Load RthJS = ƒ(tp)
BCR139
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
BCR139F
10 0 10 10 10 10
totmax
totDC
Permissible Puls Load RthJS = ƒ (tp)
BCR139F
10 0
-1 10 10 10 10
thJS
