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BCR112T ,Single digital (complex) AF-Transistors in SC75 packageBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR112W ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
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BCR112F-BCR112T
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR112...
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR112/F/L3
BCR112T/W
BCR112UEHA07184B
EHA07174B2E2B1E1
BCR112...
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR112...
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR112...
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)3 10 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR112...
Total power dissipation Ptot = ƒ(TS)
BCR112
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR112F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR112L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR112T
50
100
150
200
300
tot
BCR112...
Total power dissipation Ptot = ƒ(TS)
BCR112U
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR112W
50
100
150
200
300
tot
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
BCR1120 10 10 10 10
totmax
totDC
Permissible Pulse Load RthJS = ƒ(tp)
BCR112
10 0
-1 10 10 10 10 10
thJS