BCR108S ,NPN Silicon Digital TransistorBCR108.../SEMH10NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, d ..
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BCR108S
NPN Silicon Digital Transistor
BCR108.../SEMH10
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR108/F/L3
BCR108T/W
BCR108S
SEMH10EHA07184B
EHA07174B2E2B1E1
BCR108.../SEMH10
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR108.../SEMH10
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR108.../SEMH10
DC current gain hFE = ƒ(IC)CE = 5V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS)
BCR108
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108S
50
100
150
200
300
tot
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS)
BCR108T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMH10
50
100
150
200
300
tot
