BCR108 E6327-BCR108E6327-BCR108S E6327-BCR108S E-6327-BCR108SE6327-BCR108W E6327-BCR108W E6327 Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
BCR108 E6327 \|BCR108E6327	INFINEON	N/a	27000	avai	Digital Transistors
BCR108E6327	INFINEON	N/a	12000	avai	Digital Transistors
BCR108S E6327 \|BCR108SE6327	INFINEON	N/a	2048	avai	Digital Transistors
BCR108S E-6327 \|BCR108SE6327	INFINEON	N/a	2700	avai	Digital Transistors
BCR108SE6327	INFINEON	N/a	21000	avai	Digital Transistors
BCR108W E6327 \|BCR108WE6327		N/a	2988	avai	Digital Transistors
BCR108W E6327 \|BCR108WE6327	INFINEON	N/a	21000	avai	Digital Transistors
BCR108W E6327 \|BCR108WE6327	SIEMENS	N/a	2590	avai	Digital Transistors

BCR108 E6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR108E6327 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR108S ,NPN Silicon Digital TransistorBCR108.../SEMH10NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, d ..
BCR108S E6327 ,Digital TransistorsBCR108...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR108S E6327 ,Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50VCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR108S E-6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BLA31BD471SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA31A/BLA31B Series (1206 Size)
BLA31BD601SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA31A/BLA31B Series (1206 Size)
BLA31BD601SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA31A/BLA31B Series (1206 Size)
BLC8G27LS-160AV ,Power LDMOS transistorapplications in the 2496 MHz to 2690 MHz frequency rangeBLC8G27LS-160AVNXP SemiconductorsPower LDMO ..
BLF175 ,HF/VHF power MOS transistorapplications. ReferThis product is supplied in anti-static packing to prevent damage caused byto th ..
BLF1820-70 ,UHF power LDMOS transistor

BCR108 E6327-BCR108E6327-BCR108S E6327-BCR108S E-6327-BCR108SE6327-BCR108W E6327-BCR108W E6327
Digital Transistors
BCR108...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR108/F/L3
BCR108T/W
BCR108S
EHA07184B
EHA07174B2E2B1E1
BCR108...
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR108...
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR108...
DC current gain hFE = ƒ(IC)CE = 5V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR108...
Total power dissipation Ptot = ƒ(TS)
BCR108
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108S
50
100
150
200
300
tot
BCR108...
Total power dissipation Ptot = ƒ(TS)
BCR108T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108W
50
100
150
200
300
tot
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
BCR1080 10 10 10 10
totmax
totDC
Permissible Pulse Load RthJS = ƒ(tp)
BCR108
10 0
-1 10 10 10 10 10
thJS

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