BCR108T ,Single digital (complex) AF-Transistors in SC75 packageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR108W ,Single digital (complex) AF-Transistors in SOT323 packageBCR108.../SEMH10NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, d ..
BCR108W E6327 ,Digital TransistorsBCR108...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR108W E6327 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR108W E6327 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR10CM , MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BLC8G27LS-160AV ,Power LDMOS transistorapplications in the 2496 MHz to 2690 MHz frequency rangeBLC8G27LS-160AVNXP SemiconductorsPower LDMO ..
BLF175 ,HF/VHF power MOS transistorapplications. ReferThis product is supplied in anti-static packing to prevent damage caused byto th ..
BLF1820-70 ,UHF power LDMOS transistor
BLF1820-90 ,UHF power LDMOS transistor
BLF202 ,HF/VHF power MOS transistor
BLF2043F ,UHF power LDMOS transistor
BCR108-BCR108S E6327-BCR108T-BCR108W
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR108.../SEMH10
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR108/F/L3
BCR108T/W
BCR108S
SEMH10EHA07184B
EHA07174B2E2B1E1
BCR108.../SEMH10
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR108.../SEMH10
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR108.../SEMH10
DC current gain hFE = ƒ(IC)CE = 5V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS)
BCR108
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108S
50
100
150
200
300
tot
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS)
BCR108T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR108W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMH10
50
100
150
200
300
tot
