BCP69T1/D ,PNP Silicon Epitaxial Transistor2V, VOLTAGE (VOLTS) h , CURRENT GAINFEC, CAPACITANCE (pF) f , CURRENT GAIN BANDWIDTH PRODUCT (MHz ..
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BCP69T1/D
PNP Silicon Epitaxial Transistor
PNP Silicon
Epitaxial T ransistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT-223 package, which is designed for medium power surface
mount applications. High Current: IC = –1.0 Amp The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die. Available in 12 mm Tape and Reel
Use BCP69T1 to order the 7 inch/1000 unit reel.
Use BCP69T3 to order the 13 inch/4000 unit reel. NPN Complement is BCP68
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICSCOLLECTOR 2,4
BASE
EMITTER 3
Preferred devices are recommendedchoices for future use and best overall value.
