
BCP68-10 ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage 20 - - VV(BR)CEOI = 30 mA, I = 0 C BCollector-em ..
BCP68-16 ,General Purpose TransistorsCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max.
BCP6825 ,NPN Silicon AF Transistor (For general AF application High collector current High current gain)General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP68-25 ,NPN Silicon AF Transistor (For general AF application High collector current High current gain)General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP68T1 ,MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP68T1G , NPN Silicon Epitaxial Transistor
BL9148 , BL9148
BL9150 , CMOS LSI designed for use on the general infrared ray remote control receiver
BLA2AAG102SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA2AA/BLA2AB Series (0804 Size)
BLA2AAG121SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA2AA/BLA2AB Series (0804 Size)
BLA2AAG121SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA2AA/BLA2AB Series (0804 Size)
BLA2ABB121SN4D , EMIFIL (Inductor type) Chip Ferrite Bead (Array) BLA2AA/BLA2AB Series (0804 Size)
BCP68-10-BCP68-16
General Purpose Transistors
BCP68
NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCP68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Characteristics
AC Characteristics
BCP68
Transition frequency fT = f (IC)VCE = 5V
EHP0027510mA101102f
Total power dissipation Ptot = f(TS)
0.3
0.6
0.9
1.2
1.8
tot
Collector cutoff current ICBO = f (TA)VCB = 25V1010CBOnA10101010
DC current gain hFE = f (IC)VCE = 1V
EHP0027741012h
BCP68
Collector-emitter saturation voltageIC = f (VCEsat), hFE = 10
CEsatV
0.4V0.8010C10
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
EHP00279V
0.20.40.60.81.2V
sat0
Permissible pulse loadPtotmax / PtotDC = f (tp)-51101010-4-3-2
totmax
totPDC
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