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BCP56-16-BCX56-BCX56-10-BCX56-16-BCX56-16--
80 V, 1 A NPN medium power transistor
1. Product profile
1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data[1] Pulse test: tp 300 s; = 0.02.
BCP56; BCX56; BC56P A
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011 Product data sheet
Table 1. Product overviewBCP56 SOT223 SC-73 - BCP53
BCX56 SOT89 SC-62 TO-243 BCX53
BC56PA SOT1061 - - BC53PA Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 80 V collector current - - 1 A
ICM peak collector current single pulse; tp 1ms - - 2 A
hFE DC current gain VCE =2V; IC =150 mA [1] 63 - 250
hFE selection -10 VCE =2V; IC =150 mA [1] 63 - 160
hFE selection -16 VCE =2V; IC =150 mA [1] 100 - 250
NXP Semiconductors BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
2. Pinning information
3. Ordering information[1] Valid for all available selection groups.
Table 3. Pinning
SOT223
SOT89
SOT1061
Table 4. Ordering informationBCP56 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX56 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC56PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 22 0.65 mm
SOT1061
NXP Semiconductors BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
4. Marking Table 5. Marking codesBCP56 BCP56
BCP56-10 BCP56/10
BCP56-16 BCP56/16
BCX56 BH
BCX56-10 BK
BCX56-16 BL
BC56PA AZ
BC56-10PA BK
BC56-16PA BL
NXP Semiconductors BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 100 V
VCEO collector-emitter voltage open base - 80 V
VEBO emitter-base voltage open collector - 5 V collector current - 1 A
ICM peak collector current single pulse; 1ms A base current - 0.3 A
IBM peak base current single pulse; 1ms
-0.3 A
Ptot total power dissipation Tamb25C
BCP56 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX56 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC56PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors