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Partno	Mfg	Dc	Qty	Available	Descript
BCP55-10 \|BCP5510	NXP/PHILIPS	N/a	7000	avai	NPN medium power transistors
BCX55	NXP/PHILIPS	N/a	1400	avai	SURFACE MOUNT NPN SILICON TRANSISTOR
BCX55-10 \|BCX5510	NXP	N/a	3000	avai	SMD Small Signal Transistor NPN High Current
BCX55-16 \|BCX5516	NXP/PHILIPS	N/a	1000	avai	SMD Small Signal Transistor NPN High Current

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BL8550-33CB , 400mA Low Dropout Voltage Regulator
BL8550-33CB , 400mA Low Dropout Voltage Regulator
BL8550-33CB , 400mA Low Dropout Voltage Regulator
BL8551-33PSM , 150mA CMOS High Input Voltage Low Consumption Regulator
BL8563 , Low noise, fast response 300mA LDO regulator

BCP55-10-BCX55-BCX55-10-BCX55-16
60 V, 1 A NPN medium power transistor
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
[1] Pulse test: tp 300 s; = 0.02.
BCP55; BCX55; BC55P A
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011 Product data sheet
Table 1. Product overview
BCP55 SOT223 SC-73 - BCP52
BCX55 SOT89 SC-62 TO-243 BCX52
BC55PA SOT1061 - - BC52PA Linear voltage regulators  Power management Low-side switches  MOSFET drivers Battery-driven devices  Amplifiers
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 60 V collector current - - 1 A
ICM peak collector current single pulse; tp1 ms --2 A
hFE DC current gain VCE =2V; IC =150 mA [1] 63 - 250
hFE selection -10 VCE =2V; IC =150 mA [1] 63 - 160
hFE selection -16 VCE =2V; IC =150 mA [1] 100 - 250
NXP Semiconductors BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
2. Pinning information
3. Ordering information
[1] Valid for all available selection groups.
Table 3. Pinning
SOT223
SOT89
SOT1061
Table 4. Ordering information
BCP55 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX55 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC55PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 22 0.65 mm
SOT1061
NXP Semiconductors BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
4. Marking Table 5. Marking codes
BCP55 BCP55
BCP55-10 BCP55/10
BCP55-16 BCP55/16
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BC55PA AW
BC55-10PA BH
BC55-16PA BJ
NXP Semiconductors BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V collector current - 1 A
ICM peak collector current single pulse;  1ms A base current - 0.3 A
IBM peak base current single pulse;  1ms
-0.3 A
Ptot total power dissipation Tamb25C
BCP55 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX55 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC55PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors

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