BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKING DIAGRAMRating Symbol Value Unit4Collector ..
BCP54 ,45 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP54-10 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BCP54C B60 - ..
BCP5416 ,General Purpose TransistorsBCP54...BCP56NPN Silicon AF Transistors
BCP53.-BCP53-10T1-BCP53-16T1-BCP53T1
PNP Silicon Epitaxial Transistors
BCP53T1 Series
Preferred DevicesPNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications. High Current: 1.5 Amps NPN Complement is BCP56 The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel. Device Marking:
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16 Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
