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Partno	Mfg	Dc	Qty	Available	Descript
BCP53-10 \|BCP5310	SIEMENS	N/a	1000	avai	PNP medium power transistors
BCP53-16 \|BCP5316	NXP	N/a	18998	avai	PNP Silicon AF Transistors (For AF driver and output stages High collector current)
BCX53		N/a	100000	avai	80 V, 1 A PNP medium power transistor
BCX53-10 \|BCX5310	ROHM	N/a	4000	avai	SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-10 \|BCX5310	NXP/PHILIPS	N/a	16000	avai	SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-16 \|BCX5316	NXP	N/a	5000	avai	80 V, 1 A PNP medium power transistor

BCX53 ,80 V, 1 A PNP medium power transistor BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 — 19 October 2011 Product data sh ..
BCX53-10 ,SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-10 ,SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORSFeatures and benefits High current Three current gain selections High power dissipation capabili ..
BCX53-10 ,SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 — 19 October 2011 Product data sh ..
BCX53-10 ,SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-10 ,SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BLM6G22-30G ,W-CDMA 2100 MHz to 2200 MHz power MMICFeatures and benefits Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: Average ou ..
BL-R3132N , Low power consumption
BL-R4532N , Chip material: GaAsP/GaP
BL-REG272N , LED LAMP SPECIFICATION
BLT50 ,UHF power transistorFEATURES QUICK REFERENCE DATARF performance at T ≤ 60 °C in a common emitter class-B test circuits• ..
BLT70 ,UHF power transistorAPPLICATIONS• Hand-held radio equipment in common emitter class-ABcoperation in the 900 MHz communi ..

BCP53-10-BCP53-16-BCX53-BCX53-10-BCX53-16
80 V, 1 A PNP medium power transistor
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
1.4 Quick reference data
BCP53; BCX53; BC53P A
80 V, 1 A PNP medium power transistors
Rev. 9 — 19 October 2011 Product data sheet
Table 1. Product overview
BCP53 SOT223 SC-73 - BCP56
BCX53 SOT89 SC-62 TO-243 BCX56
BC53PA SOT1061 - - BC56PA
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 80 V collector current - - 1A
ICM peak collector current single pulse; tp 1ms - - 2A
NXP Semiconductors BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
2. Pinning information
hFE DC current gain VCE= 2V; = 150 mA - 250
hFE selection -10 VCE= 2V; = 150 mA - 160
hFE selection -16 VCE= 2V; = 150 mA
100 - 250
Table 2. Quick reference data …continued
Table 3. Pinning
SOT223
SOT89
SOT1061
NXP Semiconductors BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Table 4. Ordering information
BCP53 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX53 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC53PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 22 0.65 mm
SOT1061
Table 5. Marking codes
BCP53 BCP53
BCP53-10 BCP53/10
BCP53-16 BCP53/16
BCX53 AH
BCX53-10 AK
BCX53-16 AL
BC53PA BV
BC53-10PA BW
BC53-16PA BX
NXP Semiconductors BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 100 V
VCEO collector-emitter voltage open base - 80 V
VEBO emitter-base voltage open collector - 5V collector current - 1A
ICM peak collector current single pulse;  1ms 2A base current - 0.3 A
IBM peak base current single pulse;  1ms 0.3 A
Ptot total power dissipation Tamb25C
BCP53 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX53 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC53PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors

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