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Partno	Mfg	Dc	Qty	Available	Descript
BCP52-16 \|BCP5216	SIEMENS	N/a	287	avai	SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
BCX52	NXP	N/a	50000	avai	SURFACE MOUNT PNP SILICON TRANSISTOR
BCX52-10 \|BCX5210	NXP	N/a	14530	avai	SMD Small Signal Transistor PNP High Current
BCX52-16 \|BCX5216	NXP/PHILIPS	N/a	3280	avai	SMD Small Signal Transistor PNP High Current

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BCX52 ,SURFACE MOUNT PNP SILICON TRANSISTOR
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BCP52-16-BCX52-BCX52-10-BCX52-16
60 V, 1 A PNP medium power transistor
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
1.4 Quick reference data
BCP52; BCX52; BC52P A
60 V, 1 A PNP medium power transistors
Rev. 9 — 18 October 2011 Product data sheet
Table 1. Product overview
BCP52 SOT223 SC-73 - BCP55
BCX52 SOT89 SC-62 TO-243 BCX55
BC52PA SOT1061 - - BC55PA
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 60 V collector current - - 1A
ICM peak collector current single pulse; tp 1ms - - 2A
NXP Semiconductors BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
2. Pinning information
hFE DC current gain VCE= 2V; = 150 mA - 250
hFE selection -10 VCE= 2V; = 150 mA - 160
hFE selection -16 VCE= 2V; = 150 mA
100 - 250
Table 2. Quick reference data …continued
Table 3. Pinning
SOT223
SOT89
SOT1061
NXP Semiconductors BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Table 4. Ordering information
BCP52 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX52 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC52PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 22 0.65 mm
SOT1061
Table 5. Marking codes
BCP52 BCP52
BCP52-10 BCP52/10
BCP52-16 BCP52/16
BCX52 AE
BCX52-10 AG
BCX52-16 AM
BC52PA BS
BC52-10PA BT
BC52-16PA BU
NXP Semiconductors BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5V collector current - 1A
ICM peak collector current single pulse;  1ms 2A base current - 0.3 A
IBM peak base current single pulse;  1ms 0.3 A
Ptot total power dissipation Tamb25C
BCP52 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX52 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC52PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors

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