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BCM847BV-BCM847DS
NPN/NPN matched double transistors
Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors
1.3 Applications Current mirror Differential amplifier
1.4 Quick reference data
BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009 Product data sheet
Table 1. Product overviewBCM847BV SOT666 - BCM857BV BC847BV
BCM847BS SOT363 SC-88 BCM857BS BC847BS
BCM847DS SOT457 SC-74 BCM857DS -
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 45 V collector current - - 100 mA
hFE DC current gain VCE =5V; =2mA
200 290 450
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Per devicehFE1/hFE2 hFE matching VCE =5V; =2mA
[1] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[2] --2 mV
Table 2. Quick reference data …continued
Table 3. Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 001aab555
sym0201 36
TR1
TR2
Table 4. Ordering informationBCM847BV - plastic surface-mounted package; 6 leads SOT666
BCM847BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM847DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 5. Marking codesBCM847BV 3A
BCM847BS M1*
BCM847DS R6
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current single pulse;≤ 1ms 200 mA
Ptot total power dissipation Tamb≤25°C
SOT666 [1][2]- 200 mW
SOT363 [1]- 200 mW
SOT457 [1]- 250 mW
Per devicePtot total power dissipation Tamb≤25°C
SOT666 [1][2]- 300 mW
SOT363 [1]- 300 mW
SOT457 [1]- 380 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 625 K/W
SOT363 [1]- - 625 K/W
SOT457 [1]- - 500 K/W
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 416 K/W
SOT363 [1]- - 416 K/W
SOT457 [1]- - 328 K/W
Table 7. Thermal characteristics …continued
Table 8. CharacteristicsTamb =25 °C unless otherwise specified
Per transistorICBO collector-base cut-off
current
VCB =30V; =0A - 15 nA
VCB =30V; =0A;= 150°C 5 μA
IEBO emitter-base cut-off
current
VEB =5V; =0A - 100 nA
hFE DC current gain VCE =5V; =10μA 250 -
VCE =5V; =2mA
200 290 450
VCEsat collector-emitter
saturation voltage =10mA;= 0.5 mA 50 200 mV= 100 mA; =5mA 200 400 mV
VBEsat base-emitter
saturation voltage =10mA;= 0.5 mA
[1]- 760 - mV= 100 mA; =5mA
[1]- 910 - mV
VBE base-emitter voltage VCE =5V; =2mA
[2] 610 660 710 mV
VCE =5V; =10mA
[2]- - 770 mV collector capacitance VCB =10V; =ie =0A;=1 MHz - 1.5 pF emitter capacitance VEB= 0.5V; =ic =0A;=1 MHz
-11 - pF
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value. transition frequency VCE =5V; =10mA;= 100 MHz
100 250 - MHz noise figure VCE =5V;= 0.2 mA; =2kΩ;=10 Hz to
15.7 kHz 2.8 - dB
VCE =5V;= 0.2 mA; =2kΩ;=1 kHz;= 200Hz 3.3 - dB
Per devicehFE1/hFE2 hFE matching VCE =5V; =2mA
[3] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[4] -- 2 mV
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors Application information Package outline
