BCP6925 ,PNP Low Sat Transistor BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 — 12 October 2011 Product data sh ..
BCP69-25 ,PNP Low Sat TransistorGeneral descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP69T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKINGDIAGRAM4Rating Symbol Value Unit1Collector ..
BCP69T1/D ,PNP Silicon Epitaxial Transistor2V, VOLTAGE (VOLTS) h , CURRENT GAINFEC, CAPACITANCE (pF) f , CURRENT GAIN BANDWIDTH PRODUCT (MHz ..
BCP72M ,PNP Silicon AF Power TransistorBCP 72MPNP Silicon AF Power Transistor4
BC869-BC869-16-BC869-25-BCP69-16-BCP6925-BCP69-25
20 V, 2 A PNP medium power transistor
1. Product profile
1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
BCP69; BC869; BC69P A
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011 Product data sheet
Table 1. Product overviewBCP69 SOT223 SC-73 - BCP68
BC869 SOT89 SC-62 TO-243 BC868
BC69PA SOT1061 - - BC68PA Linear voltage regulators Power management High-side switches MOSFET drivers Battery-driven devices Amplifiers
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 20 V collector current - - 2A
ICM peak collector current single pulse; tp 1ms - - 3A
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors[1] Pulse test: tp 300 s; = 0.02.
2. Pinning informationhFE DC current gain VCE= 1V; = 500 mA
[1] 85 - 375
hFE selection -16 VCE= 1V; = 500 mA
[1] 100 - 250
hFE selection -25 VCE= 1V; = 500 mA
[1] 160 - 375
Table 2. Quick reference data …continued
Table 3. Pinning
SOT223
SOT89
SOT1061
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
3. Ordering information[1] Valid for all available selection groups.
4. Marking
Table 4. Ordering informationBCP69 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BC869 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC69PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 2 0.65 mm
SOT1061
Table 5. Marking codesBCP69 BCP69
BCP69-16 BCP69/16
BCP69-25 BCP69/25
BC869 CEC
BC869-16 CGC
BC869-25 CHC
BC69PA B3
BC69-16PA BM
BC69-25PA BN
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5V collector current - 2A
ICM peak collector current single pulse; 1ms 3A base current - 0.4 A
IBM peak base current single pulse; 1ms 0.4 A
Ptot total power dissipation Tamb25C
BCP69 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BC869 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC69PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
BCP69 [1] -- 192 K/W
[2] -- 125 K/W
[3] -- 93 K/W
BC869 [1] -- 250 K/W
[2] -- 132 K/W
[3] -- 93 K/W
BC69PA [1] -- 298 K/W
[2] -- 151 K/W
[3] -- 114 K/W
[4] -- 154 K/W
[5] -- 76 K/W
Rth(j-sp) thermal resistance from
junction to solder point
BCP69 - - 16 K/W
BC869 - - 16 K/W
BC69PA - - 20 K/W
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistorsNXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors