BC859W ,Surface mount Si-Epitaxial PlanarTransistors
BC859W ,Surface mount Si-Epitaxial PlanarTransistors
BC860 , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 125
BC860 , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 125
BC860AMTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits3• Low Noise: BC859, ..
BC860B , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 220
BG1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BG1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BG14A , 5-4000 MHz Cascadeable InGaP HBT Gain Block
BG3123 ,RF-MOSFETBG3123...4DUAL N-Channel MOSFET Tetrode56• Two gain controlled input stages for UHF and VHF -tune ..
BG3130 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BG3130R ,RF-MOSFETBG3130...4DUAL N-Channel MOSFET Tetrode56• Two gain controlled input stage for UHF and VHF -tuner ..
BC859W
Surface mount Si-Epitaxial PlanarTransistors
