BC858BL3 ,Single AF Transistors for General Purpose Applicationsapplications• High current gain3• Low collector-emitter saturation voltage1• Complementary types: B ..
BC858BL3 ,Single AF Transistors for General Purpose ApplicationsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 , BC857BL3 45 - -C ..
BC858BLT1 ,CASE 318-08, STYLE 6 SOT-23 (TO-236AB)THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR–5 Board, (1) PDT = ..
BC858BMTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits3• Low Noise: BC859, ..
BC858BMTF ,PNP Epitaxial Silicon TransistorBC856/857/858/859/860BC856/857/858/859/860Switching and Amplifier
BC858BMTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits3• Low Noise: BC859, ..
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS483 ,RF-BipolarBFS483NPN Silicon RF Transistor45
BC858BL3
Single AF Transistors for General Purpose Applications
BC857BL3, BC858BL3
PNP Silicon AF Transistors• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC847BL3,
BC848BL3 (NPN)
Maximum Ratings
Thermal Resistance
BC857BL3, BC858BL3
DC Characteristics
BC857BL3, BC858BL3
AC Characteristics
BC857BL3, BC858BL3
DC current gain hCE = 5 V101010-2-112101010
555Ι0
EHP00380CEsat0.30.5
0.10.20.4Ι
Base-emitter saturation voltageC = ƒ(V), h = 2010
0.6V1.210C
Collector cutoff current ICBO = ƒ(TA) = 30 V050100150
EHP00381
ΙCB0
typ
BC857BL3, BC858BL3
Transition frequency fCE = 5 V101010
MHz01251010Ι
Collector-base capacitance CCB= ƒ (VCB0)
Emitter-base capacitance CEB0)51010
EHP00376CB0EB0
EB0V
CB0C01
Total power dissipation Ptot = ƒ(TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = ƒ(tp)
10 0
-1 10 10 10 10
thJS
BC857BL3, BC858BL3
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
10 0 10 10 10 10
totmax
totDC
h parameter h1010EHP00383-101h10
h21e22eΙ
h parameter he = ƒ(VCE) normalizedC = 2mA0102030
2.022
