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BC857T from PHILIPS

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31.250ms

BC857T

Manufacturer: PHILIPS

PNP Silicon AF Transistor

Partnumber Manufacturer Quantity Availability
BC857T PHILIPS 2975 In Stock

Description and Introduction

PNP Silicon AF Transistor The BC857T is a general-purpose PNP transistor manufactured by PHILIPS (now NXP Semiconductors). Here are its key specifications:

- **Type**: PNP  
- **Material**: Silicon  
- **Maximum Collector-Base Voltage (VCB)**: -45V  
- **Maximum Collector-Emitter Voltage (VCE)**: -45V  
- **Maximum Emitter-Base Voltage (VEB)**: -5V  
- **Continuous Collector Current (IC)**: -100mA  
- **Total Power Dissipation (Ptot)**: 250mW  
- **DC Current Gain (hFE)**: 125–800 (depending on variant)  
- **Transition Frequency (fT)**: 100MHz  
- **Package**: SOT-23 (Surface Mount)  

These specifications are based on the PHILIPS/NXP datasheet for the BC857T transistor.

Partnumber Manufacturer Quantity Availability
BC857T NXP 9000 In Stock

Description and Introduction

PNP Silicon AF Transistor The BC857T is a general-purpose PNP transistor manufactured by NXP Semiconductors. Here are its key specifications:

- **Type**: PNP bipolar junction transistor (BJT)  
- **Package**: SOT-23 (Surface-Mount)  
- **Collector-Base Voltage (VCB)**: -45 V  
- **Collector-Emitter Voltage (VCE)**: -45 V  
- **Emitter-Base Voltage (VEB)**: -5 V  
- **Continuous Collector Current (IC)**: -100 mA  
- **Total Power Dissipation (Ptot)**: 250 mW  
- **DC Current Gain (hFE)**: 110 to 800 (depending on variant: BC857A, BC857B, BC857C)  
- **Transition Frequency (fT)**: 100 MHz  
- **Operating Temperature Range**: -65°C to +150°C  

The BC857T is commonly used in amplification and switching applications.  

(Note: Always verify datasheets for precise details, as specifications may vary slightly by variant.)

Partnumber Manufacturer Quantity Availability
BC857T DIODES 2820 In Stock

Description and Introduction

PNP Silicon AF Transistor The BC857T is a general-purpose PNP transistor manufactured by DIODES Incorporated. Key specifications include:

- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Package**: SOT-23 (Surface Mount)  
- **Collector-Base Voltage (VCBO)**: -50V  
- **Collector-Emitter Voltage (VCEO)**: -45V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -100mA (continuous)  
- **DC Current Gain (hFE)**: 110 to 800 (at IC = -2mA, VCE = -5V)  
- **Power Dissipation (PD)**: 250mW (at 25°C)  
- **Transition Frequency (fT)**: 100MHz (typical)  
- **Operating Temperature Range**: -55°C to +150°C  

Applications include amplification and switching in low-power circuits.  

For exact details, refer to the official datasheet from DIODES Incorporated.

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