BC856C ,SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORSMAXIMUM RATINGS3xmSOT−363/SC−88Rating Symbol BC856 BC857 BC858 UnitSee TableCASE 419BCollector−Emit ..
BC856T ,NPN Silicon AF TransistorsCharacteristics per TransistorV 65 - - VCollector-emitter breakdown voltage (BR)CEOI = 10 mA, I = 0 ..
BC857 ,PNP Silicon Transistor (General purpose application Switching application)Electrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low NoiseFeaturesC 3 • PNP Silicon Epitaxial Planar Transistors for 2switching and AF amplifier
BFR182 ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR182T ,RF-BipolarBFR182TNPN Silicon RF TransistorPreliminary data3
BC856BDW1T1-BC856C-BC858CDW1T1
Dual General Purpose Transistors
BC856BDW1T1,
BC857BDW1T1 Series,
BC858CDW1T1 Series
Preferred DevicesDual General Purpose
Transistors
PNP DualsThese transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications. Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858CDW1T1 = 3L
MAXIMUM RATINGS
THERMAL CHARACTERISTICS FR−5 = 1.0 x 0.75 x 0.062 in
ORDERING INFORMATION
SOT−363/SC−88
CASE 419BStyle 1
DEVICE MARKING
Preferred devices are recommended choices for future useand best overall value.
(1)(2)(3)
(4) (5) (6) = Specific Device Code = B, F, G, K, L = Date Code
http://†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
