BC860AMTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits3• Low Noise: BC859, ..
BC860B , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 220
BC860B , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 220
BC860B , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 220
BC860B , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 220
BC860BW ,PNP general purpose transistorsAPPLICATIONS3 collector• Low noise stages in tape recorders, hi-fi amplifiers andother audio-freque ..
BG1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BG14A , 5-4000 MHz Cascadeable InGaP HBT Gain Block
BG3123 ,RF-MOSFETBG3123...4DUAL N-Channel MOSFET Tetrode56• Two gain controlled input stages for UHF and VHF -tune ..
BG3130 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BG3130R ,RF-MOSFETBG3130...4DUAL N-Channel MOSFET Tetrode56• Two gain controlled input stage for UHF and VHF -tuner ..
BG3230R ,RF-MOSFETBG3230_BG3230R4DUAL N-Channel MOSFET Tetrode56• Low noise gain controlled input stages of UHF- an ..
BC856AMTF-BC856-B-BC856BMTF-BC856-B-MTF-BC857AMTF-BC857BMTF-BC858AMTF-BC858BMTF-BC858CMTF-BC859BMTF-BC859CMTF-BC859-C-MTF-BC860AMTF
PNP Epitaxial Silicon Transistor
BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC856 -80 V : BC857/860 -50 V : BC858/859 -30 V V Collector-Emitter Voltage CEO : BC856 -65 V : BC857/860 -45 V : BC858/859 -30 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 310 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -30V, I =0 -15 nA CBO CB E h DC Current Gain V = -5V, I = -2mA 110 800 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -90 -300 mV CE C B I = -100mA, I = -5mA -250 -650 mV C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -0.5mA -700 mV BE C B I = -100mA, I = -5mA -900 mV C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -600 -660 -750 mV BE CE C V = -5V, I = -10mA -800 mV CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 150 MHz T CE C f=100MHz C Output Capacitance V = -10V, I =0, f=1MHz 6 pF ob CB E NF Noise Figure : BC856/857/858 V = -5V, I = -200μA 2 10 dB CE C : BC859/860 f=1KHz, R =2KΩ 1 4 dB G : BC859 V = -5V, I = -200μA 1.2 4 dB CE C : BC860 R =2KΩ, f=30~15000Hz 1.2 2 dB G ©2002 Rev. A2, August 2002
