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BC849 from ST,ST Microelectronics

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BC849

Manufacturer: ST

0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200

Partnumber Manufacturer Quantity Availability
BC849 ST 1000 In Stock

Description and Introduction

0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200 The BC849 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics. Below are its key specifications:

- **Type**: NPN transistor  
- **Package**: SOT-23 (Surface-Mount)  
- **Collector-Base Voltage (VCB)**: 30V  
- **Collector-Emitter Voltage (VCE)**: 30V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 100mA  
- **Total Power Dissipation (Ptot)**: 250mW  
- **DC Current Gain (hFE)**: 110 to 800 (depending on variant: BC849A, BC849B, BC849C)  
- **Transition Frequency (fT)**: 100MHz  
- **Operating Temperature Range**: -55°C to +150°C  

This transistor is commonly used in amplification and switching applications.

Partnumber Manufacturer Quantity Availability
BC849 FAIRCHILD 3000 In Stock

Description and Introduction

0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200 The BC849 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. Below are its key specifications:

- **Type**: NPN  
- **Collector-Emitter Voltage (VCE)**: 30V  
- **Collector-Base Voltage (VCB)**: 30V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 100mA  
- **Power Dissipation (PD)**: 250mW  
- **DC Current Gain (hFE)**: 110 to 800 (depending on variant)  
- **Transition Frequency (fT)**: 100MHz  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: SOT-23  

Variants include:  
- **BC849A**: hFE = 110–220  
- **BC849B**: hFE = 200–450  
- **BC849C**: hFE = 420–800  

This transistor is commonly used in amplification and switching applications.

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