BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/Switch
BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/Switch
BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/SwitchGeneral descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages ..
BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/SwitchBC847BBC847C®SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847B 1FBC847C 1G■ SILICON EP ..
BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/SwitchBC847BBC847C®SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847B 1FBC847C 1G■ SILICON EP ..
BC847B ,SMD Small Signal Transistor NPN General Purpose Amplifier/Switch
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BFG10/X ,NPN 2 GHz RF power transistor
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BC847-BC847A-BC847AT-BC847AW-BC847B-BC847-B-BC847BT-BC847C-BC847CT-BC847T-BC847W
45 V, 100 mA NPN general-purpose transistors
1. Product profile
1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits General-purpose transistors SMD plastic packages Three different gain selections
1.3 Applications General-purpose switching and amplification
BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 8 — 20 August 2012 Product data sheet
Table 1. Product overviewBC847 SOT23 - TO-236AB BC857
BC847A BC857A
BC847B BC857B
BC847C BC857C
BC847W SOT323 SC-70 - BC857W
BC847AW BC857AW
BC847BW BC857BW
BC847CW BC857CW
BC847T SOT416 SC-75 - BC857T
BC847AT BC857AT
BC847BT BC857BT
BC847CT BC857CT
BC847AM SOT883 SC-101 - BC857AM
BC847BM BC857BM
BC847CM BC857CM
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
1.4 Quick reference data
2. Pinning information
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 45 V collector current - - 100 mA
hFE DC current gain VCE =5V; IC =2mA 110 - 800
hFE group A 110 180 220
hFE group B 200 290 450
hFE group C 420 520 800
Table 3. Pinning
SOT23, SOT323, SOT416
SOT883
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
3. Ordering information[1] Valid for all available selection groups.
4. Marking[1] * = placeholder for manufacturing site code
Table 4. Ordering informationBC847 - plastic surface-mounted package; 3 leads SOT23
BC847A
BC847B
BC847C
BC847W SC-70 plastic surface-mounted package; 3 leads SOT323
BC847AW
BC847BW
BC847CW
BC847T SC-75 plastic surface-mounted package; 3 leads SOT416
BC847AT
BC847BT
BC847CT
BC847AM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
SOT883
BC847BM
BC847CM
Table 5. Marking codes
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current single pulse; 1ms
-200 mA
IBM peak base current single pulse; 1ms
-100 mA
Ptot total power dissipation Tamb25C [1]
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
SOT883 [2] -250 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
SOT883 [2] -- 500 K/W
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics[1] Pulse test: tp 300 s; = 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =30V; IE =0A - - 15 nA
VCB =30V; IE =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC =10A
hFE group A - 90 -
hFE group B - 150 -
hFE group C - 270 - current gain VCE =5V; IC =2 mA 110 - 800
hFE group A 110 180 220
hFE group B 200 290 450
hFE group C 420 520 800
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - 90 200 mV =100 mA; IB =5mA [1]- 200 400 mV
VBEsat base-emitter
saturation voltage =10mA; IB =0.5 mA [2]- 700 - mV =100 mA; IB =5mA [2]- 900 - mV
VBE base-emitter voltage IC =2mA; VCE =5V [2] 580 660 700 mV =10mA; VCE =5V - - 770 mV transition frequency VCE =5V; IC =10 mA;
f=100MHz
100 --MHz collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 1.5 pF emitter capacitance VEB =0.5 V; IC =ic =0A;
f=1MHz
-11 - pF noise figure IC =200 A; VCE =5V; =2 k; f=1 kHz;
B=200Hz 10 dB
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistorsNXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistorsNXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistorsNXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
8. Package outline
