BC846UPN ,General Purpose Transistorsapplications56
BC846UPN
General Purpose Transistors
BC846UPN
NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientationEHA0717721E2B1E1
TR2
SC74_Tape356
Direction of Unreeling
Top ViewMarking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BC846UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics per Transistor
BC846UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
AC Characteristics per Transistor
BC846UPN
Total power dissipation Ptot = f (TS) 50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
BC846UPN
Collector-base capacitance CCB = f (VCBO
Emitter-base capacitance C)51010CB0EB0
EB0V
CB0C01
Transition frequency f101010
EHP00363012510C
Collector cutoff current ICBO = f (TA)CB = 30V
ΙCB0
Collector-emitter saturation voltageC = f (VCEsat), hFE = 20
EHP00367
BC846UPN
DC current gain hCE = 5V101010-2-112101010
555C
Base-emitter saturation voltage10
EHP00364
BEsatV
0.6V1.2
h parameter he = f (IC) normalizedCE = 5Vh101010
h parameter he = f (VCE) normalized = 2mA
EHP003692 mA
