BC846U ,General Purpose TransistorsCharacteristics per TransistorCollector-emitter breakdown voltage V 65 - - V(BR)CEOI = 10 mA, I = 0 ..
BC846UPN ,General Purpose Transistorsapplications56
BC846U
General Purpose Transistors
BC846U
NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
with good matching in one package
EHA0717821E2B1E1
TR1
TR2
Maximum Ratings
Thermal Resistance1For calculation of RthJA please refer to Application Note Thermal Resistance
BC846U
DC Characteristics per Transistor
BC846U
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
AC characteristics
BC846U
Total power dissipation Ptot = f (TS) 50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
BC846U
Transition frequency fCE = 5V101010
MHz01251010C
Collector-base capacitance CCB = f (VCBO
Emitter-base capacitance CEBO)51010
EHP00361CB0EB0
EB0V
CB0C01
Collector cutoff current ICBO = f (TA)CB = 30V
ΙCB0
Collector-emitter saturation voltageC = f (VCEsat), hFE = 20
EHP00367
BC846U
DC current gain hCE = 5V101010-2-112101010
555C
Base-emitter saturation voltage10
EHP00364
BEsatV
0.6V1.2
0.20.40.8
