BC850BMTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits• Low Noise: BC849, B ..
BC850BW ,Surface mount Si-Epitaxial PlanarTransistors
BC850BW ,Surface mount Si-Epitaxial PlanarTransistors
BC850C , 0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420
BC850C , 0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420
BC850C , 0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420
BFQ231 ,NPN video transistors
BFQ232A ,NPN video transistors
BFQ232A ,NPN video transistors
BFQ252A ,PNP video transistors
BFQ252A ,PNP video transistors
BFQ252A ,PNP video transistors
BC846-A-MTF-BC846BMTF-BC846-B-MTF-BC847AMTF-BC847-A-MTF-BC847BMTF-BC847-B-MTF-BC847BS-BC847CMTF-BC848AMTF-BC848BMTF-BC848CMTF-BC849BMTF-BC849CMTF-BC849-C-MTF-BC850AMTF-BC850BMTF-BC850CMTF
NPN Epitaxial Silicon Transistor
BC846/847/848/849/850 BC846/847/848/849/850 3 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC846 80 V : BC847/850 50 V : BC848/849 30 V V Collector-Emitter Voltage CEO : BC846 65 V : BC847/850 45 V : BC848/849 30 V V Emitter-Base Voltage EBO : BC846/847 6 V : BC848/849/850 5 V I Collector Current (DC) 100 mA C P Collector Power Dissipation 310 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =30V, I =0 15 nA CBO CB E h DC Current Gain V =5V, I =2mA 110 800 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 90 250 mV CE C B I =100mA, I =5mA 200 600 mV C B V (sat) Collector-Base Saturation Voltage I =10mA, I =0.5mA 700 mV BE C B I =100mA, I =5mA 900 mV C B V (on) Base-Emitter On Voltage V =5V, I =2mA 580 660 700 mV BE CE C V =5V, I =10mA 720 mV CE C f Current Gain Bandwidth Product V =5V, I =10mA, f=100MHz 300 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 3.5 6 pF ob CB E C Input Capacitance V =0.5V, I =0, f=1MHz 9 pF ib EB C NF Noise Figure : BC846/847/848 V =5V, I =200μA 2 10 dB CE C : BC849/850 f=1KHz, R =2KΩ 1.2 4 dB G : BC849 V =5V, I =200μA 1.4 4 dB CE C : BC850 R =2KΩ, f=30~15000Hz 1.4 3 dB G ©2002 Rev. A2, August 2002
