BC817UPN ,General Purpose Transistorsapplications56
BC817UPN
General Purpose Transistors
BC817UPN
NPN/PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientationSC74_Tape356
Direction of UnreelingMarking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA0717721E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BC817UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BC817UPN
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Collector cutoff current IA)10
EHP00221T
ΙCBO10010
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
BC817UPN
Collector-emitter saturation voltageC = f (V10
CEsatV
0.4V0.810mA10
BEsatV
2.0V4.0
Transition frequency fT = f (IC)CE = 5V
EHP0021810mA101102f
DC current gain hFE = f (IC)CE = 5V310mA10100101h10105
:
www.ic-phoenix.com
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