BC817U ,General Purpose Transistorsapplications56
BC817U
General Purpose Transistors
BC817U
NPN Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
with good matching in one package
EHA0717821E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BC817U
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BC817U
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Collector cutoff current IA)10
EHP00221T
ΙCBO10010
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
BC817U10
BEsatV
2.0V4.0
Collector-emitter saturation voltageC = f (V10
CEsatV
0.4V0.810mA10
Transition frequency fT = f (IC)CE = 5V
EHP0021810mA101102f
DC current gain hFE = f (IC)CE = 1V310mA10100101h10105
:
www.ic-phoenix.com
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