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BC817DPN from NXP/PHILIPS,NXP Semiconductors

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BC817DPN

Manufacturer: NXP/PHILIPS

NPN/PNP general purpose transistor

Partnumber Manufacturer Quantity Availability
BC817DPN NXP/PHILIPS 3000 In Stock

Description and Introduction

NPN/PNP general purpose transistor The BC817DPN is a general-purpose NPN transistor manufactured by NXP/Philips. Here are its key specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)  
- **Package**: SOT-457 (SC-74)  
- **Collector-Base Voltage (VCBO)**: 45V  
- **Collector-Emitter Voltage (VCEO)**: 45V  
- **Emitter-Base Voltage (VEBO)**: 5V  
- **Collector Current (IC)**: 500mA (max)  
- **Power Dissipation (Ptot)**: 330mW  
- **DC Current Gain (hFE)**: 100 to 600 (at IC = 2mA, VCE = 5V)  
- **Transition Frequency (fT)**: 100MHz (typical)  
- **Operating Temperature Range**: -55°C to +150°C  

It is commonly used in amplification and switching applications.

Partnumber Manufacturer Quantity Availability
BC817DPN PHI 3000 In Stock

Description and Introduction

NPN/PNP general purpose transistor The BC817DPN is a general-purpose NPN transistor manufactured by PHI (Philips). Here are its key specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)  
- **Package**: SOT-457 (SC-74)  
- **Collector-Base Voltage (VCBO)**: 45V  
- **Collector-Emitter Voltage (VCEO)**: 45V  
- **Emitter-Base Voltage (VEBO)**: 5V  
- **Collector Current (IC)**: 500mA  
- **Power Dissipation (Ptot)**: 330mW  
- **DC Current Gain (hFE)**: 100 to 600 (at IC = 2mA, VCE = 5V)  
- **Transition Frequency (fT)**: 100MHz (typical)  
- **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on PHI's datasheet for the BC817DPN.

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