BC817-25W-BC818-16W Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
BC817-25W \|BC81725W	INFINEON	N/a	30000	avai	Discrete
BC818-16W \|BC81816W	INFINEON	N/a	9000	avai	General Purpose Transistors

BC817-25W ,DiscreteCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BC817WC B25 - ..
BC817-40 , 0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.500A Ic, 250BC817-25BC817-40®SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C■ SI ..
BC817-40-7-F , NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC817-40LT1 ,General Purpose Transistors(NPN Silicon)Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BC817-40LT1G ,Silicon Transistor PlasticTHERMAL CHARACTERISTICSSOT−23CASE 318Characteristic Symbol Max UnitSTYLE 6Total Device Dissipation ..
BC817DPN ,NPN/PNP general purpose transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF799 ,RF-Bipolar
BF799 ,RF-Bipolar
BF799W ,RF-BipolarcharacteristicsV 20 - - VCollector-emitter breakdown voltage (BR)CEOI = 1 mA, I = 0 C BV 30 - -Coll ..
BF819 ,NPN high-voltage transistor
BF820 ,Surface mount Si-Epitaxial PlanarTransistors
BF820 ,Surface mount Si-Epitaxial PlanarTransistors

BC817-25W-BC818-16W
General Purpose Transistors
BC817W, BC818W
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BC817W, BC818W
DC Characteristics
BC817W, BC818W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
BC817W, BC818W
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
Collector cutoff current ICBO = f (TA)CBO = 25V10
EHP00221
150100
BC817W, BC818W
DC current gain hCE = 1V310mA10100101h10105
Transition frequency f
EHP0021810mA101102f
Collector-emitter saturation voltage = f (V), h = 1010
EHP00215
0.4V0.8
Base-emitter saturation voltageC = f (VBEsat), hFE = 1010
2.0V4.010C10
1.03.0
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