BC807W ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 BC 807W 45 - -C BB ..
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100Rev. 1.2, 03-Jan-05 3BC807 to BC808Vishay Semiconductors010 10000.5 -V = 1V CE0.2hFE0.1-125 °C100.0 ..
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100
BC80816MTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages3• Complement to BC817/BC818 ..
BF545C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones anddginfra-red detectorss• VHF ampl ..
BF547 ,NPN 1 GHz wideband transistor
BF554 , NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)
BF556C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones and3infra-red detectorsTop viewMAM0 ..
BF569 ,PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS)
BF569 ,PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS)Absolute Maximum RatingsT = 25
BC807W
PNP Silicon AF Transistor for general...
BC 807W, BC 808W
PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 818W (NPN)
Maximum Ratings
Thermal Resistance
BC 807W, BC 808W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BC 807W, BC 808W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
BC 807W, BC 808W
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
50
100
150
200
300
tot
50
100
150
200
300
tot
50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
Collector cutoff current ICBO = f(TA)CB = 25V10
EHP00213
150100
BC 807W, BC 808W
DC current gain hCE = 1V310mA10100101h10105
Transition frequency fEHP0021010mA101102f
Collector-emitter saturation voltage = f (V), h = 1010
EHP00215
0.4V0.8
Base-emitter saturation voltageC = f(VBEsat), hFE = 1010
2.0V4.010C10
1.03.0
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