BC807DS ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BC807W ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 BC 807W 45 - -C BB ..
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100Rev. 1.2, 03-Jan-05 3BC807 to BC808Vishay Semiconductors010 10000.5 -V = 1V CE0.2hFE0.1-125 °C100.0 ..
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100
BF545B ,N-channel silicon junction field-effect transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BF545B ,N-channel silicon junction field-effect transistorsDISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect trans ..
BF545C ,N-channel FETGeneral descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 packa ..
BF545C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones anddginfra-red detectorss• VHF ampl ..
BF547 ,NPN 1 GHz wideband transistor
BF554 , NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)
BC807DS
PNP general purpose double transistor
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC807DS
FEATURES High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS General purpose switching and amplification Push-pull amplifiers Multi-phase stepper motor drivers.
DESCRIPTIONPNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC807DS
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Notes Pulse test: tp ≤ 300 μs; δ ≤ 0.02. VBE decreases by approximately −2 mV/K with increasing temperature.
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC807DS
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC807DS
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC807DS
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only.
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System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
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above those given in the Characteristics sections of this
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extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
