BC80740 ,PNP General Purpose Amplifierapplications at currents to 1.0 A. Sourced from Process 78.Absolute Maximum Ratings* TA = 25°C ..
bc807-40 , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.500A Ic, 250Rev. 1.2, 03-Jan-05 1BC807 to BC808Vishay SemiconductorsMaximum Thermal ResistanceParameter Test co ..
BC807-40LT1 ,Silicon Transistor PlasticELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC807-40LT1 ,Silicon Transistor PlasticMaximum ratings applied to the device are individual stress limit values (notSOT−23normal operating ..
BC807-40LT1 ,Silicon Transistor PlasticELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC807-40LT1G ,General Purpose Transistors(PNP Silicon)THERMAL CHARACTERISTICSCharacteristic Symbol Max Unitxxx = 5A (BC807−16LT1)5B1 (BC807−25LT1)Total D ..
BF458 , 10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE.
BF470 , 2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469
BF470 , 2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469
BF471 , 2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472
BF472 ,Leaded Power Transistor General Purpose
BF483 ,NPN high-voltage transistors
BC80740
PNP General Purpose Amplifier
BC807-16 / BC807-25 / BC807-40 BC807-16 BC807-25 BC807-40 C E SOT-23 B Mark: 5A. / 5B. / 5C. PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 3 Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO V Collector-Base Voltage 50 V CES V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.2 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BC807-16 / -25 / -40 P Total Device Dissipation 350 mW D 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 357 °C/W θJA *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997
