BC80725MTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages3• Complement to BC817/BC818 ..
BC80725MTF ,PNP Epitaxial Silicon TransistorBC807/BC808BC807/BC808Switching and Amplifier
BC807-25-MTF ,PNP Epitaxial Silicon TransistorBC807/BC808BC807/BC808Switching and Amplifier
BC807-25W ,DiscreteELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC807-25W-7 , PNP SURFACE MOUNT TRANSISTOR
BC80740 ,PNP General Purpose Amplifierapplications at currents to 1.0 A. Sourced from Process 78.Absolute Maximum Ratings* TA = 25°C ..
BF423 ,PNP Silicon Transistor (High voltage application Monitor equipment application)Rating Symbol BF421 BF423 UnitCOLLECTORCollector−Emitter Voltage V −300 −250 VdcCEO2Collector−Base ..
BF423L ,PNP high-voltage transistors
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BC80716MTF-BC80725MTF-BC807-25-MTF-BC80740MTF-BC807-40-MTF-BC80816MTF
PNP Epitaxial Silicon Transistor
BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC817/BC818 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC807 -50 V : BC808 -30 V V Collector-Emitter Voltage CEO : BC807 -45 V : BC808 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -800 mA C P Collector Power Dissipation -310 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 CEO C B : BC807 -45 V : BC808 -25 V BV Collector-Emitter Breakdown Voltage I = -0.1mA, V =0 CES C BE : BC807 -50 V : BC808 -30 V BV Emitter-Base Breakdown Voltage I = -0.1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -25V, V =0 -100 nA CES CE BE I Emitter Cut-off Current V = -4V, I =0 -100 nA EBO EB C h DC Current Gain V = -1V, I = -100mA 100 630 FE1 CE C h V = -1V, I = -300mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.7 V CE C B V (on) Base-Emitter On Voltage V = -1V, I = -300mA -1.2 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 100 MHz T CE C f=50MHz C Output Capacitance V = -10V, f=1MHz 12 pF ob CB ©2002 Rev. A2, August 2002
