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BC640FAIRCHILDN/a5135avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640PHN/a10000avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640CDILN/a2920avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640NXPN/a1500avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40


BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640-016 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC640-016G , High Current Transistors
BC64016 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF3506TV ,FULL 50-60Hz RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF3510TV ,FULL 50-60HZ RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25


BC640
0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
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