BC638 , 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC638 , 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC638 , 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC639 ,NPN SILICON PLANAR MEDIUM POWER TRANSISTORTHERMAL CHARACTERISTICS BC635RL1 TO−92 2000/Tape & ReelCharacteristic Symbol Max UnitBC635ZL1 TO−92 ..
BC63910 , 0.800W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC639-10 , 0.800W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BF246B ,N-channel silicon junction field-effect transistors
BF247A ,N-channel silicon junction field-effect transistors
BF247A ,N-channel silicon junction field-effect transistors
BF254 ,RF TransistorsTransistors - bipolar
RF transistors
Plastic package TO 92
Type Maximum ratings
BF255 , NPN Silicon RF Transisrors
BF256B ,VHF/UHF Amplifier(N-Channel, Depletion)
BC638
0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
