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Partno	Mfg	Dc	Qty	Available	Descript
BC638	Seimens	N/a	695	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC638	Philips-Fairchild	N/a	5000	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC640	Philips	N/a	8000	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC64016	PHILIPS	N/a	3000	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 \|BC64016	Philips	N/a	4500	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 \|BC64016	ON	N/a	5000	avai	0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25

BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640-016 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC640-016G , High Current Transistors
BC64016 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF3506TV ,FULL 50-60Hz RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF3510TV ,FULL 50-60HZ RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25

BC638-BC640-BC64016-BC640-16

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