BC636-16 ,TO-92 Plastic-Encapsulate Biploar Transistors
BC637 , 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC637 , 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40Maximum ratings are those values beyond which device damage can occur.
BC637 , 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC637 , 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BC637 , 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BF245C ,N-Channel RF Amplifier
BF245C ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245C ,N-Channel RF Amplifier
BF246A ,N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
BF246A ,N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
BF246B ,N-channel silicon junction field-effect transistors
BC636-16
