BC617 ,NPN Silicon Darlington TransistorcharacteristicsCollector-emitter breakdown voltage V(BR)CE0 VIC = 10 mABC 617 40 – –BC 618 55 – –Co ..
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC635 ,High Current Transistors
BC635 ,High Current Transistors
BF240 ,NPN Radio Frequency TransistorBF240BF240NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* T =25° ..
BF244A ,N-Channel RF Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
BF244A ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244B ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244C ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF245 ,N-Channel AmplifiersBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF a ..
BC617
NPN Silicon Darlington Transistor
SHIEMIENS
NPN Silicon Darlington Transistors BC 617
BC 618
0 High current gain
0 High collector current
'tiCttitt3
Type Marking Ordering Code Pin Configuration Package')
BC 617 - Q62702-C1137 C B E TO-92
BC 618 Q62702-C1138
Maximum Ratings
Parameter Symbol Values
BC 617 BC 618 Unit
Collector-emitter voltage VCEO 40 55 V
Collector-base voltage Vcao 50 80
Emitter-base voltage VEBO 12
Collector current lo 500 mA
Peak collector current Ics, 800
Base current h, 100
Peak base current law: 200
Total power dissipation, To = 66 ( Ptot 625 mW
Junction temperature T; 150 (
Storage temperature range Tstg - 65 ... + 150
Thermal Resistance
Junction - ambient RthJA f 200 KNV
Junction - case) Rmuc s 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
Semiconductor Group 1 5.91
SIEMENS BC 617
BC 618
Electrical Characteristics
at TA = 25 ''C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CEO V
Ic = 10 mA
BC 617 40 - -
BC 618 55 - -
Collector-base breakdown voltage V(BR)CBO
Ic = 100 “A
BC 617 50 - -
BC 618 80 - -
Emitter-base breakdown voltage V(BR)EBo 12 - -
IE = 10 11A
Collector cutoff current ha,
Vcs = 40 V BC 617 - - 100 nA
Vca = 60 V BC 618 - - 100 nA
Vca=40V,TA=150°C BC617 - - 10 “A
Vce=60V,TA=150°C BC618 - - 10 “A
Emitter cutoff current IEBO - - 100 nA
VEB = 4 V
DC current gain hrs -
Ic = 100 WA,' VCE = 5 V BC 617 4000 - -
BC 618 2000 - -
lo: 10 mA; VCE=5V1) BC 617 10000 - -
BC 618 4000 - -
Ic = 200 mA; Vce = 5 V1) BC 617 20000 - 70000
BC 618 10000 - 50000
Ic = 1000 mA; Vce = 5 V1) BC 617 10000 - -
BC 618 4000 - -
Collector-emitter saturation voltage') VCEsat - - 1.1 V
Io = 200 mA; hs = 0.2 mA
Base-emitter saturation voltage" VBEsat - - 1.6
fc = 200 mA; ha = 0.2 mA
1) Pulse test: ts: 300 us, D s 2 %.
Semiconductor Group 2
