BC558 ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC558 ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC558 ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC558A ,30 V, PNP silicon planar epitaxial transistor Document Number 851334 Rev. 1.2, 16-Nov-04P - Admissible Power Dissipation (mW)totr - Puls ..
BC558A ,30 V, PNP silicon planar epitaxial transistorFeaturesC 1 • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier
BC558B ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BF2000W , Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
BF2030 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2030R ,RF-MOSFETBF2030...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF2030W ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040R ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BC558
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
