BC558B ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558BRL1 ,Amplifier Transistors
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558C ,30 V, PNP silicon planar epitaxial transistorAbsolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BF2000W , Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
BF2030 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2030R ,RF-MOSFETBF2030...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF2030W ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040R ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BC556B-BC557BTA-BC558B-BC558C-BC558-C-BC559B-BC560C
PNP Epitaxial Silicon Transistor
BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, V = -65V CEO • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V V Collector-Emitter Voltage CEO : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -30V, I =0 -15 nA CBO CB E h DC Current Gain V = -5V, I =2mA 110 800 FE CE C V Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -90 -300 mV CE C B (sat) I = -100mA, I = -5mA -250 -650 mV C B V (sat) Collector-Base Saturation Voltage I = -10mA, I = -0.5mA -700 mV BE C B I = -100mA, I = -5mA -900 mV C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -600 -660 -750 mV BE CE C V = -5V, I = -10mA -800 mV CE C f Current Gain Bandwidth Product V = -5V, I = -10mA, f=10MHz 150 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 6 pF ob CB E NF Noise Figure : BC556/557/558 V = -5V, I = -200μA 2 10 dB CE C : BC559/560 f=1KHz, R =2KΩ 1 4 dB G : BC559 V = -5V, I = -200μA 1.2 4 dB CE C : BC560 R =2KΩ, f=30~15000MHz 1.2 2 dB G h Classification FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE ©2002 Rev. A2, August 2002
